Polarisation dependence of two-photon absorption generated by band-limited amplified spontaneous emission noise in silicon avalanche photodiodes
نویسندگان
چکیده
منابع مشابه
Photon counting techniques with silicon avalanche photodiodes.
The properties of avalanche photodiodes and associated electronics required for photon counting in the Geiger and the sub-Geiger modes are reviewed. When the Geiger mode is used, there are significant improvements reported in overall photon detection efficiencies (approaching 70% at 633 nm), and a timing jitter (under 200 ps) is achieved with passive quenching at high overvoltages (20-30 V). Th...
متن کاملLow-Noise Silicon Avalanche Photodiodes Fabricated in Conventional CMOS Technologies
We present a simple design technique that allows the fabrication of UV/blueselective avalanche photodiodes in a conventional CMOS process. The photodiodes are fabricated in a twin tub 0.8 m CMOS technology. An efficient guard-ring structure is created using the lateral diffusion of two n-well regions separated by a gap of 0.6 m. When operated at a multiplication gain of 20, our photodiodes achi...
متن کاملEnergy band-gap dependence of two-photon absorption.
We present measurements of the two-photon absorption coefficients beta(2) of 10 different semiconductors having band-gap energies between 1.4 and 3.7 eV. We find that beta(2) varies as E(g)(-3), as predicted by theory. In addition, the absolute values of beta(2) agree with theory, which includes the effect of nonparabolic bands, the average difference being less than 26%. This agreement permits...
متن کاملSingle photon production by rephased amplified spontaneous emission
The production of single photons using rephased amplified spontaneous emission is examined. This process produces single photons on demand with high efficiency by detecting the spontaneous emission from an atomic ensemble, then applying a population-inverting pulse to rephase the ensemble and produce a photon echo of the spontaneous emission events. The theoretical limits on the efficiency of t...
متن کاملInfrared single-photon detection by two-photon absorption in silicon
We propose a scheme for infrared single-photon detection based on two-photon absorption at room temperature in Si avalanche photodiodes, where the detected photon’s energy is lower than the band gap and the energy difference is complemented by a pump field. A quantum nonperturbative model is developed for nondegenerate two-photon absorption in direct and indirect semiconductors yielding proper ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics Letters
سال: 2011
ISSN: 0013-5194,1350-911X
DOI: 10.1049/el.2011.3317